Thermal ageing analysis and lifetime prediction of IGBT inverter for solar PV-grid electricity connectivity

dc.contributor.authorHOUNGAN, KOKOU THÉOPHILE
dc.contributor.authorFIFATIN, François-Xavier
dc.contributor.authorSALEH, MAHAMAT
dc.contributor.authorESPANET, CHRISTOPHE
dc.contributor.authorAGBOKPANZO, RICHARD GILLES
dc.date.accessioned2026-06-02T16:06:57Z
dc.date.available2026-06-02T16:06:57Z
dc.date.issued2016
dc.description.abstractThermal factors contributing to the ageing of Insulated Gate Bipolar Transistor (IGBT) inverters were investigat-ed, with special reference to temperature variation as the main source of degradation of the electrical insulations and material layers. The inverter configuration was analysed in order to predict the lifetime based on thermal age-ing. Therefore, a lifetime prediction model based on NSGA-II algorithm was implemented to identify optimal design condition as a compromise between the average temperature and total mass of the inverter. The option of either choosing design configuration according to using the device during the entire lifetime or half of the lifetime of the solar panel was the major decision. The research findings would contribute to better adaptation of IGBT inverter-solar panel for grid electricity connectivity in relation to the replacement of the invertor once over the lifetime of the panel.
dc.identifier.otherBECDB-2347
dc.identifier.urihttps://dspace.uac.bj/handle/123456789/2386
dc.language.isofr
dc.relation.ispartofJournal of Applied Science and Technology (JAST)
dc.subjectIGBT inverter
dc.subjectsolar PV-Grid electricity
dc.subjectNSGA-II algorithm
dc.subjectthermal ageing
dc.subjectlifetime prediction
dc.titleThermal ageing analysis and lifetime prediction of IGBT inverter for solar PV-grid electricity connectivity
dc.typeArticle

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